Cite
Spectroscopic characterization of a single dangling bond on a bare Si(100)-c(4 χ 2) surface for n- and p-type doping.
MLA
Mantega, M., et al. “Spectroscopic Characterization of a Single Dangling Bond on a Bare Si(100)-c(4 χ 2) Surface for n- and p-Type Doping.” Physical Review B: Condensed Matter & Materials Physics, vol. 86, no. 3, July 2012, pp. 1–5. EBSCOhost, https://doi.org/10.1103/PhysRevB.86.035318.
APA
Mantega, M., Rungger, I., Naydenov, B., Boland, J. J., & Sanvito, S. (2012). Spectroscopic characterization of a single dangling bond on a bare Si(100)-c(4 χ 2) surface for n- and p-type doping. Physical Review B: Condensed Matter & Materials Physics, 86(3), 1–5. https://doi.org/10.1103/PhysRevB.86.035318
Chicago
Mantega, M., I. Rungger, B. Naydenov, J. J. Boland, and S. Sanvito. 2012. “Spectroscopic Characterization of a Single Dangling Bond on a Bare Si(100)-c(4 χ 2) Surface for n- and p-Type Doping.” Physical Review B: Condensed Matter & Materials Physics 86 (3): 1–5. doi:10.1103/PhysRevB.86.035318.