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Pulse voltage-induced dynamic magnetization switching in magnetic tunneling junctions with high resistance-area product.
- Source :
-
Applied Physics Letters . 9/3/2012, Vol. 101 Issue 10, p102406-102406-4. 1p. 1 Diagram, 2 Graphs. - Publication Year :
- 2012
-
Abstract
- We investigated pulse voltage-induced dynamic magnetization switchings in magnetic tunneling junctions with a high resistance-area product of 2 kΩ μm2. We found that bistable switching and the oscillatory behavior of switching probability as a function of voltage pulse duration are realized at a lower current density (-1.1 × 105 A/cm2) than in conventional spin-transfer-torque-induced magnetization switching. In addition, the switching probability at different voltage pulse strengths confirmed the existence of a voltage torque induced by a change in perpendicular magnetic anisotropy. This voltage-induced magnetization switching can be a useful technique in future spintronics devices with fast and highly reliable writing processes. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 101
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 79864605
- Full Text :
- https://doi.org/10.1063/1.4751035