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Surface Selectively Deposited Organic Single-crystal Transistor Arrays with High Device Performance.
- Source :
-
Molecular Crystals & Liquid Crystals . Nov2012, Vol. 566 Issue 1, p13-17. 5p. - Publication Year :
- 2012
-
Abstract
- A method for patterning organic single-crystal transistor arrays via surface selective deposition is presented. Solvent-vapor annealing is applied for the formation of organic crystals under ambient conditions. The devices are fabricated with a dual-gate structure, which allows the investigation of device performances of bottom-gate/top-contact (BG/TC) and top-gate/top-contact (TG/TC) structures based on the same crystals. The resulting BG/TC devices exhibit the field-effect mobility (μFET) up to 3.5 cm2/Vs. And μ FET is influenced by the contact resistance, resulting in large variation in device performance. On the other hand, TG/TC structure exhibits better performance with smaller variation. The highest μ FET is 7.4 cm2/Vs. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 15421406
- Volume :
- 566
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Molecular Crystals & Liquid Crystals
- Publication Type :
- Academic Journal
- Accession number :
- 79875607
- Full Text :
- https://doi.org/10.1080/15421406.2012.703812