Morphology control of tunneling dielectric towards high-performance organic field-effect transistor nonvolatile memory

Abstract: We report high-performance organic field-effect transistor nonvolatile memory based on nano-floating-gate, which shows a large memory window of about 70V, high ON/OFF ratio of reading current over 105 after 1week storage, high field-effect mobility of 0.6cm2/Vs, and good programming/erasing/reading endurance. The devices incorporate Au nanoparticles and polystyrene layer on top to form the nano-floating-gate, and we demonstrate that the morphology control of the tunneling dielectric is critically significant to improve the memory performance. The optimized tunneling dielectric morphology is favorable to the efficient charge tunneling, reliable charge storage and high-quality organic film growth. [Copyright &y& Elsevier]