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Realistic Simulations on Reverse Junction Characteristics of SiC and GaN Power Semiconductor Devices.
- Source :
-
Journal of Power Electronics . Jan2012, Vol. 12 Issue 1, p19-23. 5p. - Publication Year :
- 2012
-
Abstract
- This paper presents a practical methodology for realistic simulation on reverse characteristics of Wide Bandgap (WBG) SiC and GaN p-n junctions. The adjustment on certain physic-based model parameters, such as the trap density and photo-generation for SiC junction, and impact ionization coefficients and critical field for GaN junction are described. The adjusted parameters were used in Synopsys Medici simulation to obtain a realistic p-n junction avalanche breakdown voltage. The simulation results were verified through benchmarking against independent data reported by others. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 15982092
- Volume :
- 12
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Journal of Power Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 82190768
- Full Text :
- https://doi.org/10.6113/JPE.2012.12.1.19