Electrically active defects at AlN/Si interface studied by DLTS and ESR.

MLA

Simoen, Eddy, et al. “Electrically Active Defects at AlN/Si Interface Studied by DLTS and ESR.” Physica Status Solidi. A: Applications & Materials Science, vol. 209, no. 10, Oct. 2012, pp. 1851–56. EBSCOhost, https://doi.org/10.1002/pssa.201200061.

APA

Simoen, E., Visalli, D., Van Hove, M., Leys, M., Favia, P., Bender, H., Borghs, G., Nguyen, A. P. D., & Stesmans, A. (2012). Electrically active defects at AlN/Si interface studied by DLTS and ESR. Physica Status Solidi. A: Applications & Materials Science, 209(10), 1851–1856. https://doi.org/10.1002/pssa.201200061

Chicago

Simoen, Eddy, Domenica Visalli, Marleen Van Hove, Maarten Leys, Paola Favia, Hugo Bender, Gustaaf Borghs, Ahn Puc Duc Nguyen, and Andre Stesmans. 2012. “Electrically Active Defects at AlN/Si Interface Studied by DLTS and ESR.” Physica Status Solidi. A: Applications & Materials Science 209 (10): 1851–56. doi:10.1002/pssa.201200061.