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Optical and Electrical Properties of Single-Crystal Si Supersaturated with Se by Ion Implantation.
- Source :
-
Chinese Physics Letters . Sep2012, Vol. 29 Issue 9, p1-4. 4p. - Publication Year :
- 2012
-
Abstract
- Optical and electrical properties of single-crystal Si supersaturated with Se by ion implantation and followed by different thermal annealing conditions are reported. Si is implanted with 1 × 1016 cm-2 Se ions at 100 keV. The total substitutional fraction of Se atoms in Si is 45% under the annealing at 800°C for 30 min and the peak concentration of substitutional Se atoms is exceeded 1 × 1020 cm-3. A temperature-independent carrier concentration of 3 × 1019 cm-3 is measured and the near-infrared absorption is closed to 30%. These results indicate the insulator-to-metal transition of the doped layer and the formation of impurity bands in the Si band gap. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0256307X
- Volume :
- 29
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Chinese Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 82472994
- Full Text :
- https://doi.org/10.1088/0256-307X/29/9/097101