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An alternative approach for femtosecond laser induced black silicon in ambient air
- Source :
-
Applied Surface Science . Nov2012, Vol. 261, p722-726. 5p. - Publication Year :
- 2012
-
Abstract
- Abstract: An alternative approach for femtosecond laser induced black silicon in ambient air is proposed, in which, black silicon is fabricated on a tellurium coated silicon substrate via femtosecond laser irradiation in ambient air, and selectively etching with hydrofluoric acid is employed to remove the incorporated oxygen. Results of energy dispersive X-ray spectroscopy analysis and absorption measurement show that oxygen is effectively eliminated via etching, and the optical absorption of the black silicon is enhanced. [Copyright &y& Elsevier]
- Subjects :
- *FEMTOSECOND lasers
*SILICON
*AIR
*TELLURIUM
*X-ray spectroscopy
*ABSORPTION
Subjects
Details
- Language :
- English
- ISSN :
- 01694332
- Volume :
- 261
- Database :
- Academic Search Index
- Journal :
- Applied Surface Science
- Publication Type :
- Academic Journal
- Accession number :
- 82678735
- Full Text :
- https://doi.org/10.1016/j.apsusc.2012.08.087