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Comparison of 4.5-kV Press-Pack IGBTs and IGCTs for Medium-Voltage Converters.
- Source :
-
IEEE Transactions on Industrial Electronics . Feb2013, Vol. 60 Issue 2, p440-449. 10p. - Publication Year :
- 2013
-
Abstract
- Recently developed insulated-gate bipolar transistor (IGBT) press-pack (PP) devices with a blocking voltage of 4.5 kV are being used in medium-voltage converters as an alternative to integrated gate-commutated thyristors (IGCTs). This paper presents an overview of PP packaging and both semiconductor technologies. A quantitative comparison of these devices is achieved through measurements for a 4.5-kV 1.2-kA IGBT and a 4.5-kV 4-kA IGCT. The laboratory test bench for the switching transient characterization at a dc-link voltage of 2.5 kV and currents up to 3 kA is described. Conduction, blocking, and switching behavior for junction temperatures up to 125 ^\circ\C are investigated. The IGCT and the IGBT are tested using a di/dt-limiting clamp circuit. In addition, the IGBT is tested in hard switching mode. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 02780046
- Volume :
- 60
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Industrial Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 82710321
- Full Text :
- https://doi.org/10.1109/TIE.2012.2187417