Cite
Monitoring Potential Defects in an IGBT Module Based on Dynamic Changes of the Gate Current.
MLA
Zhou, Shengqi, et al. “Monitoring Potential Defects in an IGBT Module Based on Dynamic Changes of the Gate Current.” IEEE Transactions on Power Electronics, vol. 28, no. 3, Mar. 2013, pp. 1479–87. EBSCOhost, https://doi.org/10.1109/TPEL.2012.2210249.
APA
Zhou, S., Zhou, L., & Sun, P. (2013). Monitoring Potential Defects in an IGBT Module Based on Dynamic Changes of the Gate Current. IEEE Transactions on Power Electronics, 28(3), 1479–1487. https://doi.org/10.1109/TPEL.2012.2210249
Chicago
Zhou, Shengqi, Luowei Zhou, and Pengju Sun. 2013. “Monitoring Potential Defects in an IGBT Module Based on Dynamic Changes of the Gate Current.” IEEE Transactions on Power Electronics 28 (3): 1479–87. doi:10.1109/TPEL.2012.2210249.