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Modeling read SNM considering both soft oxide breakdown and negative bias temperature instability

Authors :
Afzal, Behrouz
Ebrahimi, Behzad
Afzali-Kusha, Ali
Mahmoodi, Hamid
Source :
Microelectronics Reliability. Dec2012, Vol. 52 Issue 12, p2948-2954. 7p.
Publication Year :
2012

Abstract

Abstract: In this paper, we propose a read SNM model which considers soft oxide breakdown (SBD). It makes use of a resistance for modeling the soft oxide breakdown which adds two terms to the original model expression for the read SNM. The accuracy of the model is verified by comparing its predictions with those of HSPICE simulations for 45, 32, and 22nm technologies. The comparison reveals a very good accuracy for the model. The results also show that NBTI aggravates the effect of SBD on the read SNM. This suggests that the effect of NBTI and SBD should be studied concurrently as has been performed in our model. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
00262714
Volume :
52
Issue :
12
Database :
Academic Search Index
Journal :
Microelectronics Reliability
Publication Type :
Academic Journal
Accession number :
83299256
Full Text :
https://doi.org/10.1016/j.microrel.2012.07.026