Molecular dynamics simulation of hydrogenated carbon film growth from CH radicals

Abstract: The growth of hydrogenated carbon film from CH radicals is studied by classical molecular dynamics simulation for various incident energies (3.25–130eV). The impingement of CH radical and its effect on the microstructure of formed film are carefully analyzed. It is found that the sp3-C fraction is almost identical to the H concentration for all films; both of them decrease with increasing incident energy. To deposit hydrogenated carbon film with fine smoothness, the energy of incident CH should be 10–70eV. At other energies (either lower or higher), deposited films are of roughness and with some chain-like structures at surface. Different growth mechanisms behind these observations are discussed. [Copyright &y& Elsevier]