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Unipolar resistive switching behavior of Pt/LixZn1-xO/Pt resistive random access memory devices controlled by various defect types.
- Source :
-
Applied Physics Letters . 11/12/2012, Vol. 101 Issue 20, p203501. 5p. 4 Graphs. - Publication Year :
- 2012
-
Abstract
- The unipolar resistive switching behavior of Pt/LixZn1-xO/Pt structures fabricated via radio-frequency magnetron sputtering is investigated. Various Li doping concentrations influence the defect types (i.e., VO, Lii, and LiZn) in LixZn1-xO films for adjustable resistance ratio. The resistance ratio reaches 108 due to the minimized leakage current in the high-resistance state (HRS) at 6 at. % Li dopants. The dominant conduction mechanisms are explained in terms of Ohmic behavior and Poole-Frenkel (PF) emission. The coefficient r of the PF emission in the HRS is evaluated to confirm that the total number of defects in LixZn1-xO films decreases with increasing Li content. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 101
- Issue :
- 20
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 83493940
- Full Text :
- https://doi.org/10.1063/1.4766725