Nonlinear dependence of set time on pulse voltage caused by thermal accelerated breakdown in the Ti/HfO2/Pt resistive switching devices.

Dynamic processes of resistance switching have been systemically investigated for the Ti/HfO2/Pt bipolar devices. Different transient characteristics were observed in the set and reset processes. The set process consisted of a waiting step and a following abrupt transition, whereas the reset process demonstrated a gradual resistance change. Nonlinear dependence of set time on pulse voltage was observed and explained by the thermally accelerated dielectric breakdown of local switching regions. The accumulation and dissipation effects observed for different pulse treatments strongly supported the proposed model, which suggests a possible approach to overcome the voltage-time dilemma. [ABSTRACT FROM AUTHOR]