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Heterojunction photodiode fabricated from hydrogen treated ZnO nanowires grown on p-silicon substrate.
- Source :
-
Applied Physics Letters . 11/19/2012, Vol. 101 Issue 21, p211103-211103-4. 1p. 4 Graphs. - Publication Year :
- 2012
-
Abstract
- A heterojunction photodiode was fabricated from ZnO nanowires (NWs) grown on a p-type Si (100) substrate using a hydrothermal method. Post growth hydrogen treatment was used to improve the conductivity of the ZnO NWs. The heterojunction photodiode showed diode characteristics with low reverse saturation current (5.58 × 10-7 A), relatively fast transient response, and high responsivity (22 A/W at 363 nm). Experiments show that the photoresponsivity of the photodiode is dependent on the polarity of the voltages. The photoresponsivity of the device was discussed in terms of the band diagrams of the heterojunction and the carrier diffusion process. [ABSTRACT FROM AUTHOR]
- Subjects :
- *HETEROJUNCTIONS
*PHOTODIODES
*HYDROGEN
*ZINC oxide
*NANOWIRES
*SILICON
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 101
- Issue :
- 21
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 83557804
- Full Text :
- https://doi.org/10.1063/1.4767679