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Ultra Low Dark Current, High Responsivity and Thin Multiplication Region in InGaAs/InP Avalanche Photodiodes.
- Source :
-
Chinese Physics Letters . Nov2012, Vol. 29 Issue 11, p1-3. 3p. - Publication Year :
- 2012
-
Abstract
- A separate absorption, grading, charge and multiplication InGaAs/InP avalanche photodiode with ultra low dark current and high responsivity is demonstrated. It has a thin multiplication layer and a planar structure. Through the use of a well and a single floating guard ring to suppress edge breakdown, the device can easily be fabricated by one step epitaxial growth and one step diffusion. The dark current of a 30 μm diameter device is as low as 0.028 nA at punch-through and 0.1 nA at 90% of the breakdown voltage. The responsivity at 1.55 μm is 0.93A/W at unity gain and the multiplication layer is estimated to be less than 300 nm. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0256307X
- Volume :
- 29
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- Chinese Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 83883885
- Full Text :
- https://doi.org/10.1088/0256-307X/29/11/118503