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Electrical properties of Pt/n-type Ge Schottky contact with PEDOT:PSS interlayer
- Source :
-
Journal of Alloys & Compounds . Feb2013, Vol. 549, p18-21. 4p. - Publication Year :
- 2013
-
Abstract
- Abstract: The effect of poly (3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) interlayer on the Schottky barrier parameters of Pt/n-type Ge Schottky contacts was investigated. The PEDOT:PSS interlayer in between Pt and n-type Ge influences the space charge region of the Pt/n-type Ge Schottky junction, leading to increase in the barrier height. Due to interface dipoles and lateral barrier inhomogeneities caused by the presence of PEDOT:PSS interlayer, Pt/PEDOT:PSS/n-type Ge Schottky contact showed a deviation from the ideal thermionic emission model of the carrier transport at the metal/semiconductor junction. From the reverse current–voltage (I–V) characteristics, the Poole–Frenkel emission and Schottky emission were found to be the dominating carrier conduction mechanisms of Pt/PEDOT:PSS/n-type Ge Schottky contact at lower and higher reverse biases, respectively. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 09258388
- Volume :
- 549
- Database :
- Academic Search Index
- Journal :
- Journal of Alloys & Compounds
- Publication Type :
- Academic Journal
- Accession number :
- 83930271
- Full Text :
- https://doi.org/10.1016/j.jallcom.2012.09.085