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Purification of metallurgical grade silicon by a microwave-assisted plasma process
- Source :
-
Separation & Purification Technology . Jan2013, Vol. 102, p82-85. 4p. - Publication Year :
- 2013
-
Abstract
- Abstract: A new microwave plasma process is developed to refine and purify metallurgical grade silicon (MG-Si) effectively. Inductively coupled plasma-atomic emission spectrometry analysis (ICP-AES) indicates that the concentrations of impurities in silicon decrease significantly in the process, particularly for phosphorus, whose average removal rate is close to 100% after microwave plasma treatment of only 5min. The underlying mechanisms of the ultra-high removal rate of impurity atoms are discussed in detail in this paper. The photoresponse switching behavior of n+-Si wafers that are made of as-purified silicon provides further evidence for the unique advantage arising from the use of microwave plasma in the purification of MG-Si. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 13835866
- Volume :
- 102
- Database :
- Academic Search Index
- Journal :
- Separation & Purification Technology
- Publication Type :
- Academic Journal
- Accession number :
- 83934096
- Full Text :
- https://doi.org/10.1016/j.seppur.2012.09.035