Back to Search
Start Over
Radiation effects on the silicon semiconductor detectors for the ASTRO–H mission
- Source :
-
Nuclear Instruments & Methods in Physics Research Section A . Jan2013, Vol. 699, p225-229. 5p. - Publication Year :
- 2013
-
Abstract
- Abstract: Hard X-ray Imager (HXI) and Soft Gamma-ray Detector (SGD) onboard the 6th Japanese X-ray satellite, ASTRO–H, utilize double-sided silicon strip detectors (DSSD) and pixel array-type silicon sensors (Si-pad), respectively. The DSSD with a 3.4cm×3.4cm area has an imaging capability in the lower energy band for the HXI covering 5–80keV. The Si-pad consists of 16×16 pixels with a 5.4cm×5.4cm area and measures a photon direction with the Compton kinematics in 10–600keV. Since the ASTRO–H will be operated in a low earth orbit, these detectors will be damaged by irradiation of cosmic-ray protons mainly in the South Atlantic Anomaly. In order to evaluate damage effects of the sensors, we have carried out irradiation tests with 150MeV proton beams and 60Co gamma-rays with a total dose of 10–20 years irradiation level. In both experiments, the leakage current has increased by under an expected operation temperature at −15°C, which resulted in the noise level within a tolerance of 20 years. In this report, we present a summary of the basic performance of silicon detectors, and radiation effects on them by the irradiation tests. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 01689002
- Volume :
- 699
- Database :
- Academic Search Index
- Journal :
- Nuclear Instruments & Methods in Physics Research Section A
- Publication Type :
- Academic Journal
- Accession number :
- 83968868
- Full Text :
- https://doi.org/10.1016/j.nima.2012.05.088