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Growth analysis of (Ag,Cu)InSe2 thin films via real time spectroscopic ellipsometry.

Authors :
Little, S. A.
Ranjan, V.
Collins, R. W.
Marsillac, S.
Source :
Applied Physics Letters. 12/3/2012, Vol. 101 Issue 23, p231910. 4p. 1 Chart, 3 Graphs.
Publication Year :
2012

Abstract

In situ and ex situ characterization methods have been applied to investigate the properties of (Ag,Cu)InSe2 (ACIS) thin films. Data acquired from real time spectroscopic ellipsometry (RTSE) experiments were analyzed to extract the evolution of the nucleating, bulk, and surface roughness layer thicknesses. The evolution of these layer thicknesses suggests a transition from Volmer-Weber to Stranski-Krastanov type behavior when Cu is replaced by Ag. The complex dielectric functions of ACIS at both deposition and room temperature as a function of film composition were also extracted from the RTSE data, enabling parameterization of the alloy optical properties. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
101
Issue :
23
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
84122362
Full Text :
https://doi.org/10.1063/1.4769902