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Back-illuminated separate absorption and multiplication AlGaN solar-blind avalanche photodiodes.
- Source :
-
Applied Physics Letters . 12/17/2012, Vol. 101 Issue 25, p253516. 4p. 1 Diagram, 4 Graphs. - Publication Year :
- 2012
-
Abstract
- This letter reports the fabrication and performance of back-illuminated separate absorption and multiplication AlGaN solar-blind avalanche photodiodes. Devices with a 60-μm-diameter active area and a double-mesa structure exhibit a low dark current density of 1.06 × 10-8 A/cm2 at the reverse bias of 20 V and a maximum multiplication gain up to 3000 at the reverse bias of 91 V. The temperature dependence of avalanche voltage shows a large positive temperature coefficient of 0.05 V/K, confirming that avalanche multiplication is the dominant gain mechanism in the photodiodes. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 101
- Issue :
- 25
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 84461815
- Full Text :
- https://doi.org/10.1063/1.4772984