Growth of Conductive SrRuO3Films by CombiningAtomic Layer Deposited SrO and Chemical Vapor Deposited RuO2Layers.

SrRuO3(SRO) film was deposited by sequentialexecutionsof atomic layer deposition of SrO and chemical vapor deposition ofRuO2layers at a low growth temperature of 230 °Cusing Sr(iPr3Cp)2, RuO4precursors, and O2gas. A wide rangeof Sr (Ru) concentration could be obtained by modulating the SrO/RuO2subcycle ratio, and a high growth rate of ∼2.0 nm/supercyclewas achieved with the stoichiometric SRO composition. The as-depositedSRO film was amorphous, and crystallized SRO film was obtained bypost deposition annealing in N2ambient at temperaturesranging from 600 to 700 °C. Crystallized SRO film was adoptedas a seed layer for the in situ crystallization of ALD SrTiO3(STO) film for application to capacitors for next generation dynamicrandom access memory. Consequently, a crystalline STO film was grownon crystallized SRO in the as-deposited state, and the dielectricconstant of the STO film was largely improved compared to that ofthe amorphous STO, from 12 to 44. [ABSTRACT FROM AUTHOR]