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Modeling the Effects of Hydrogen on the Mechanisms of Dose Rate Sensitivity.

Authors :
Esqueda, Ivan S.
Barnaby, Hugh J.
Adell, Philippe C.
Source :
IEEE Transactions on Nuclear Science. Apr2012 Part 2, Vol. 59 Issue 4, p701-706. 6p.
Publication Year :
2012

Abstract

The effects of hydrogen on dose-rate sensitivity are simulated using a one-dimensional (1-D) model that incorporates the physical mechanisms contributing to dose-rate effects in the metal-oxide-semiconductor (MOS) system of gated lateral pnp (GLPNP) bipolar transistors. Calculations show that molecular hydrogen cracking at positively charged defects may be a key reaction relating hydrogen and dose rate response. Comparison to experimental data on bipolar devices is in good agreement with the dose rate calculations of interface trap buildup. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00189499
Volume :
59
Issue :
4
Database :
Academic Search Index
Journal :
IEEE Transactions on Nuclear Science
Publication Type :
Academic Journal
Accession number :
84489205
Full Text :
https://doi.org/10.1109/TNS.2012.2195201