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Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random Memory.
- Source :
-
IEEE Transactions on Electron Devices . Jan2013, Vol. 60 Issue 1, p70-77. 8p. - Publication Year :
- 2013
-
Abstract
- Resistive-switching random access memory (RRAM) devices utilizing a crossbar architecture represent a promising alternative for Flash replacement in high-density data storage applications. However, RRAM crossbar arrays require the adoption of diodelike select devices with high on–off -current ratio and with sufficient endurance. To avoid the use of select devices, one should develop passive arrays where the nonlinear characteristic of the RRAM device itself provides self-selection during read and write. This paper discusses the complementary switching (CS) in hafnium oxide RRAM, where the logic bit can be encoded in two high-resistance levels, thus being immune from leakage currents and related sneak-through effects in the crossbar array. The CS physical mechanism is described through simulation results by an ion-migration model for bipolar switching. Results from pulsed-regime characterization are shown, demonstrating that CS can be operated at least in the 10-ns time scale. The minimization of the reset current is finally discussed. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 60
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 84489938
- Full Text :
- https://doi.org/10.1109/TED.2012.2226728