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RF-plasma vapor deposition of siloxane on paper. Part 2: Chemical evolution of paper surface

Authors :
Sahin, Halil Turgut
Source :
Applied Surface Science. Jan2013, Vol. 265, p564-569. 6p.
Publication Year :
2013

Abstract

Abstract: Survey and high-resolution (HR) XPS studies indicate that OMCTSO plasma treatment created a new silicon containing functional groups and changed the hydroxyl content on the surface of paper. Four intense survey XPS spectrum peaks were observed for the OMCTSO plasma treated paper. They were the Si2p at 100eV, Si2s at 160eV, C1s at 285eV, and O1s at 525eV for the plasma modified surface. It was realized that the macromolecular chain-breaking mechanisms and plasma-induced etching processes control the number and the availability of OH-functionalities during OMCTSO plasma exposure on paper. The reaction, initiated by these species, depends mainly on the nature of chemicals in the plasma as well as on the energy level of the plasma and the nature of the surface effects in the modification of the paper. The ATR-FTIR spectrum of paper treated with OMCTSO plasma has characteristic absorption bands attributed to the Sice:glyph name="sbnd" />Oions on the surface. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
01694332
Volume :
265
Database :
Academic Search Index
Journal :
Applied Surface Science
Publication Type :
Academic Journal
Accession number :
84596679
Full Text :
https://doi.org/10.1016/j.apsusc.2012.11.046