Back to Search
Start Over
Very low 1/f barrier noise in sputtered MgO magnetic tunnel junctions with high tunneling magnetoresistance.
- Source :
-
Journal of Applied Physics . 12/15/2012, Vol. 112 Issue 12, p123907. 4p. 5 Graphs. - Publication Year :
- 2012
-
Abstract
- Low frequency 1/f barrier noise has been investigated in sputtered MgO magnetic tunnel junctions (MTJs) with a tunneling magnetoresistance ratio of up to 330% at room temperature. The lowest normalized noise parameter α of the tunnel barrier reaches 2.5 × 10-12-2.1 × 10-11 μm2, which is comparable to that found in MTJs with the MgO barrier grown by MBE or electron-beam evaporation. This normalized barrier noise is almost bias independent in the voltage range of up to ±1.2 V. The low noise level and high voltage stability may reflect the high quality of the sputtered MgO with a uniform distribution of defects in the MgO layer. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 112
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 84624109
- Full Text :
- https://doi.org/10.1063/1.4769805