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Angular dependence of the Hall effect of La0.8Sr0.2MnO3 films.

Authors :
Naftalis, Netanel
Haham, Noam
Hoffman, Jason
Marshall, Matthew S. J.
Ahn, C. H.
Klein, Lior
Source :
Physical Review B: Condensed Matter & Materials Physics. Nov2012, Vol. 86 Issue 18, p1-5. 5p.
Publication Year :
2012

Abstract

We find that the Hall effect resistivity (ρxy) of thin films of La0.8Sr0.2MnO3 varies as a function of the angle θ between the applied magnetic field and the film normal as ρxy = a cosθ + b cos 3θ, where |b| increases with increasing temperature and decreases with increasing magnetic field. We find that the angular dependence of the longitudinal resistivity and the magnetization cannot fully explain the surprising term b, suggesting it is a manifestation of an intrinsic transport property. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
10980121
Volume :
86
Issue :
18
Database :
Academic Search Index
Journal :
Physical Review B: Condensed Matter & Materials Physics
Publication Type :
Academic Journal
Accession number :
84635594
Full Text :
https://doi.org/10.1103/PhysRevB.86.184402