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Analytical Modeling of IGBTs: Challenges and Solutions.
- Source :
-
IEEE Transactions on Electron Devices . Feb2013, Vol. 60 Issue 2, p535-543. 9p. - Publication Year :
- 2013
-
Abstract
- With the availability of advanced computing capability, it is fashionable to analyze and design insulated-gate bipolar transistors (IGBTs) using sophisticated 2-D and 3-D numerical simulation tools. However, analytical modeling of IGBTs allows a deeper understanding of the physics of operation, which can foster innovation. This paper reviews 1-D analytical models developed for the IGBT on-state characteristics, switching behavior, and safe operating area for symmetric (nonpunchthrough) and asymmetric (punchthrough) devices. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 60
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 85018977
- Full Text :
- https://doi.org/10.1109/TED.2012.2222415