Cite
High-Voltage Isolation Technique Using Fe Ion Implantation for Monolithic Integration of AlGaN/GaN Transistors.
MLA
Umeda, Hidekazu, et al. “High-Voltage Isolation Technique Using Fe Ion Implantation for Monolithic Integration of AlGaN/GaN Transistors.” IEEE Transactions on Electron Devices, vol. 60, no. 2, Feb. 2013, pp. 771–75. EBSCOhost, https://doi.org/10.1109/TED.2012.2230264.
APA
Umeda, H., Takizawa, T., Anda, Y., Ueda, T., & Tanaka, T. (2013). High-Voltage Isolation Technique Using Fe Ion Implantation for Monolithic Integration of AlGaN/GaN Transistors. IEEE Transactions on Electron Devices, 60(2), 771–775. https://doi.org/10.1109/TED.2012.2230264
Chicago
Umeda, Hidekazu, Toshiyuki Takizawa, Yoshiharu Anda, Tetsuzo Ueda, and Tsuyoshi Tanaka. 2013. “High-Voltage Isolation Technique Using Fe Ion Implantation for Monolithic Integration of AlGaN/GaN Transistors.” IEEE Transactions on Electron Devices 60 (2): 771–75. doi:10.1109/TED.2012.2230264.