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A 0.13-\mu\ m SiGe BiCMOS Colpitts-Based VCO for W-Band Radar Transmitters.
- Source :
-
IEEE Transactions on Microwave Theory & Techniques . Jan2013 Part 1, Vol. 61 Issue 1, p185-194. 10p. - Publication Year :
- 2013
-
Abstract
- This paper presents a Colpitts-based voltage-controlled oscillator (VCO) for W-band radar applications. In the proposed circuit, the oscillation signal is directly drawn from the switching transistor bases by means of the primary winding of a transformer tank, while the secondary winding drives the output buffer. This solution improves both tuning range and oscillation swing with respect to traditional millimeter-wave VCO topologies without increasing power supply. The oscillator is implemented in a 0.13-\mu\ m SiGe BiCMOS technology, along with high-frequency dividers to enable low-frequency testing. The VCO exhibits a phase noise of -\99.3 dBc/Hz at 1-MHz offset from an oscillation frequency of 76 GHz and a tuning range of 4.9% with a consumption of 65 mW at 2.5-V power supply. The VCO is also used to drive a two-stage power amplifier in a fully integrated W-band transmitter that is able to deliver an overall output power as high as 15 dBm at 76 GHz. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189480
- Volume :
- 61
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Microwave Theory & Techniques
- Publication Type :
- Academic Journal
- Accession number :
- 85019177
- Full Text :
- https://doi.org/10.1109/TMTT.2012.2226053