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Electronic Origin of Ultrafast Photoinduced Strain in BiFeO3.

Authors :
Haidan Wen
Pice Chen
Cosgriff, Margaret P.
Walko, Donald A.
June Hyuk Lee
Adamo, Carolina
Schaller, Richard D.
Ihlefeld, Jon F.
Dufresne, Eric M.
Schlom, Darrell G.
Evans, Paul G.
Freeland, John W.
Yuelin Li
Source :
Physical Review Letters. 1/18/2013, Vol. 110 Issue 3, p037601-1-037601-5. 5p.
Publication Year :
2013

Abstract

Above-band-gap optical excitation produces interdependent structural and electronic responses in a multiferroic BiFeO3 thin film. Time-resolved synchrotron x-ray diffraction shows that photoexcitation can induce a large out-of-plane strain, with magnitudes on the order of half of one percent following pulsed-laser excitation. The strain relaxes with the same nanosecond time dependence as the interband relaxation of excited charge carriers. The magnitude of the strain and its temporal correlation with excited carriers indicate that an electronic mechanism, rather than thermal effects, is responsible for the lattice expansion. The observed strain is consistent with a piezoelectric distortion resulting from partial screening of the depolarization field by charge carriers, an effect linked to the electronic transport of excited carriers. The nonthermal generation of strain via optical pulses promises to extend the manipulation of ferroelectricity in oxide multiferroics to subnanosecond time scales. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00319007
Volume :
110
Issue :
3
Database :
Academic Search Index
Journal :
Physical Review Letters
Publication Type :
Academic Journal
Accession number :
85349198
Full Text :
https://doi.org/10.1103/PhysRevLett.110.037601