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Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory
- Source :
-
Thin Solid Films . Feb2013, Vol. 529, p389-393. 5p. - Publication Year :
- 2013
-
Abstract
- Abstract: This paper studies the effect of doping on BON-based resistive switching characteristics. Typical bipolar resistive switching behavior can be observed in Pt/BON/TiN and Pt/BON:Gd/TiN devices. The conductive path(s) of the Pt/BON/TiN is vacancy-dominated while the Pt/BON:Gd/TiN is metal-dominated. Additionally, there is an atypical bipolar resistive switching in the Gd-doping device. This atypical characteristic has not only a size effect, but also a lower operating current. The resistance transitions are due to the variation in conductance of the switching layer, which is clearly influenced by the different area size. A mechanism is proposed to explain this atypical characteristic. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00406090
- Volume :
- 529
- Database :
- Academic Search Index
- Journal :
- Thin Solid Films
- Publication Type :
- Academic Journal
- Accession number :
- 85418679
- Full Text :
- https://doi.org/10.1016/j.tsf.2012.09.031