Cite
Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage Improvement.
MLA
Zhou, Qi, et al. “Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage Improvement.” IEEE Transactions on Electron Devices, vol. 60, no. 3, Mar. 2013, pp. 1075–81. EBSCOhost, https://doi.org/10.1109/TED.2013.2241439.
APA
Zhou, Q., Chen, W., Liu, S., Zhang, B., Feng, Z., Cai, S., & Chen, K. J. (2013). Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage Improvement. IEEE Transactions on Electron Devices, 60(3), 1075–1081. https://doi.org/10.1109/TED.2013.2241439
Chicago
Zhou, Qi, Wanjun Chen, Shenghou Liu, Bo Zhang, Zhihong Feng, Shujun Cai, and Kevin J. Chen. 2013. “Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage Improvement.” IEEE Transactions on Electron Devices 60 (3): 1075–81. doi:10.1109/TED.2013.2241439.