A 1.65 W Fully Integrated 90 nm Bulk CMOS Capacitive DC--DC Converter With Intrinsic Charge Recycling.

A fully integrated high power density capacitive 2:1 step-down DC–DC converter is designed in a standard CMOS technology. The converter implements the presented flying well technique and intrinsic charge recycling technique to deliver a maximum output power of 1.65 W on a chip area of 2.14 mm^2, resulting in a power conversion density of \0.77\, \W/mm^2. A peak power conversion efficiency of \69\\% is achieved, leading to an efficiency enhancement factor of +\36\\% with respect to a linear regulator. This is for a voltage step-down conversion from twice the nominal supply voltage of a \90 nm technology (\2V{\bf dd} = \2.4\, \V) to \1\, \V. [ABSTRACT FROM AUTHOR]