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ALCVD AlO[subx] Barrier Layers for Magnetic Tunnel Junction Applications.
- Source :
-
IEEE Transactions on Magnetics . Sep2002 Part 1, Vol. 38 Issue 5, p2724. 3p. 1 Black and White Photograph, 1 Chart, 4 Graphs. - Publication Year :
- 2002
-
Abstract
- Presents a study which evaluated the feasibility of ultrathin atomic-layer chemical vapor deposition technique aluminum oxide[subx] films as the tunnel barrier for magnetic tunnel junction applications. Experimental procedure; Results and discussion; Conclusion.
- Subjects :
- *CHEMICAL vapor deposition
*ALUMINUM oxide
*METALLIC films
*QUANTUM tunneling
Subjects
Details
- Language :
- English
- ISSN :
- 00189464
- Volume :
- 38
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Magnetics
- Publication Type :
- Academic Journal
- Accession number :
- 8607793
- Full Text :
- https://doi.org/10.1109/TMAG.2002.803163