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In-situ post-annealing technique for improving piezoelectricity and ferroelectricity of Li-doped ZnO thin films prepared by radio frequency magnetron sputtering system.
- Source :
-
Applied Physics Letters . 3/11/2013, Vol. 102 Issue 10, p102107-102107-4. 1p. 5 Graphs. - Publication Year :
- 2013
-
Abstract
- Li-doped zinc oxide (L0.03Z0.97O) thin films are deposited onto Pt/Ti/SiO2/Si substrates via the radio frequency magnetron sputtering method. The structure evolution with annealing temperature of the predominantly (002)-oriented Li-doped ZnO (LZO) films after in-situ post-annealing process is determined. The largest values of the piezoelectric coefficient (d33) and the remnant polarization (Pr) (22.85 pm/V and 0.655 μC/cm2, respectively) are obtained for LZO films post-annealed at 600 °C, which can be attributed to the predominant (002)-oriented crystalline structure, the release of intrinsic residual compressive stress, and less non-lattice oxygen. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 102
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 86141293
- Full Text :
- https://doi.org/10.1063/1.4795525