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Capacitance-voltage analysis of LaAlO3/SrTiO3 heterostructures.
- Source :
-
Applied Physics Letters . 3/18/2013, Vol. 102 Issue 11, p112906. 4p. 1 Diagram, 3 Graphs. - Publication Year :
- 2013
-
Abstract
- We performed capacitance-voltage analysis of 5-nm-thick LaAlO3/SrTiO3 heterostructure containing two-dimensional-electron-gas (2DEG) at the interface. The complex impedance of the heterostructure was measured as a function of frequency for a wide range of gate biases. The impedance spectra showed a different behavior above and below an applied voltage of -1.8 V. The capacitance determined from the impedance was approximately 1.2 nF above -1.8 V and was drastically reduced to ∼0.01 nF below this voltage, owing to depletion of 2DEG and the insulating SrTiO3 underneath it. This suggests that devices utilizing LaAlO3/SrTiO3 can facilitate switching operations in a very small voltage range. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 102
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 86256931
- Full Text :
- https://doi.org/10.1063/1.4798334