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Photoelectrodes modification by N doping for dye-sensitized solar cells

Authors :
Xie, Yanan
Huang, Niu
Liu, Yumin
Sun, Weiwei
Mehnane, Hadja Fatima
You, Sujian
Wang, Linyuan
Liu, Wei
Guo, Shishang
Zhao, Xing-Zhong
Source :
Electrochimica Acta. Mar2013, Vol. 93, p202-206. 5p.
Publication Year :
2013

Abstract

Abstract: TiO2 doping has been widely used to improve the performance of dye-sensitized solar cells. In this paper, we study the use of N as a dopant of TiO2 in dye-sensitized solar cells (DSSCs), analyzing the effect on the photovoltaic properties of the cells based on different amounts of N doping. Results indicate that the dye absorption is increased, which would enhance the amount of photoelectron; moreover, the resistance (R 3) of the electron transport within photoelectrode and electron lifetime of it are improved by N doping. The above two reasons would lead the high short circuit current density (J sc). However, owing to the sites of recombination and severe defects introduced, the trend of dye absorption, R 3 and electron lifetime is opposite when the amount of N doping is more than 3%. Finally, we find that the optimal amount of N doing is 3%, which outstandingly increase the performance of DSSCs. The conversion efficiency of the DSSCs can be reached to 6.25% when using the 3% N-doped TiO2 photoelectrode, and this efficiency is 23.03% higher than that of the pure TiO2. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
00134686
Volume :
93
Database :
Academic Search Index
Journal :
Electrochimica Acta
Publication Type :
Academic Journal
Accession number :
86408590
Full Text :
https://doi.org/10.1016/j.electacta.2013.01.091