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Quantum confinement and electron spin resonance characteristics in Si-implanted silicon oxide films.
- Source :
-
Journal of Applied Physics . Apr2011, Vol. 109 Issue 8, p084502. 5p. 4 Graphs. - Publication Year :
- 2011
-
Abstract
- The nature of electron and hole trapping in silicon ion-implanted silicon oxide (SiO2) with a dose of 1016 cm-2 were studied using photoluminescence and electron spin resonance (ESR) measurements. We observed an ESR signal with g = 2.006 after hole and electron injections. These results unambiguously imply that the Si nanoclusters created by the high-dose Si implants are both electron and hole traps in the SiO2 films. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 109
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 86444379
- Full Text :
- https://doi.org/10.1063/1.3573482