Rate limiting step for the switching kinetics in Cu doped Ge0.3Se0.7 based memory devices with symmetrical and asymmetrical electrodes.

We report on the comparison of the resistance switching properties and kinetic behavior of Cu doped Ge0.3Se0.7 solid electrolyte based dual layer memory devices integrated with asymmetrical (Pt and Cu) and symmetrical electrodes (only Cu). In spite of the fact that the observed resistance switching properties and its parameters are quite similar for both memory devices, the dependence of the SET-voltage on the voltage sweep rate suggests different microscopic rate limiting factors for the resistance switching behavior. Additionally, in order to alleviate the cross talk problem in passive crossbar arrays, a dual layer oxide stack (TiO2/Al2O3) is integrated with Ge0.3Se0.7 based dual layer memory devices to achieve a specific degree of non-linearity in the overall resistance of the low resistance state. [ABSTRACT FROM AUTHOR]