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Analysis and Design of Stacked-FET Millimeter-Wave Power Amplifiers.
- Source :
-
IEEE Transactions on Microwave Theory & Techniques . Apr2013, Vol. 61 Issue 4, p1543-1556. 14p. - Publication Year :
- 2013
-
Abstract
- Stacked field-effect transistor (FET) CMOS millimeter-wave power amplfiers (PAs) are studied with a focus on design of appropriate complex impedances between the transistors. The stacking of multiple FETs allows increasing the supply voltage, which, in turn, allows higher output power and a broader bandwidth output matching network. Different matching techniques for the intermediate nodes are analyzed and used in two-, three-, and four-stack single-stage Q-band CMOS PAs. A four-stack amplifier design achieves a saturated output power greater than 21 dBm while achieving a maximum power-added efficiency (PAE) greater than 20% from 38 to 47 GHz. The effectiveness of an inductive tuning technique is demonstrated in measurement, improving the PAE from 26% to 32% in a two-stack PA design. The input and output matching networks are designed using on-chip shielded coplanar waveguide transmission lines, as well as metal finger capacitors. The amplifiers were implemented in a 45-nm CMOS silicon-on-insulator process. Each of the amplifiers occupies an area of 600 \mum\,\times\,500 \mum including pads. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189480
- Volume :
- 61
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Microwave Theory & Techniques
- Publication Type :
- Academic Journal
- Accession number :
- 86693098
- Full Text :
- https://doi.org/10.1109/TMTT.2013.2247698