Cite
Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study.
MLA
Reshchikov, M. A., et al. “Two Charge States of Dominant Acceptor in Unintentionally Doped GaN: Evidence from Photoluminescence Study.” Applied Physics Letters, vol. 81, no. 26, Dec. 2002, p. 4970. EBSCOhost, https://doi.org/10.1063/1.1531227.
APA
Reshchikov, M. A., Morkoç, H., Park, S. S., & Lee, K. Y. (2002). Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study. Applied Physics Letters, 81(26), 4970. https://doi.org/10.1063/1.1531227
Chicago
Reshchikov, M. A., H. Morkoç, S. S. Park, and K. Y. Lee. 2002. “Two Charge States of Dominant Acceptor in Unintentionally Doped GaN: Evidence from Photoluminescence Study.” Applied Physics Letters 81 (26): 4970. doi:10.1063/1.1531227.