InGaN laser diodes with reduced AlGaN cladding thickness fabricated on GaN plasmonic substrate.

MLA

Stanczyk, S., et al. “InGaN Laser Diodes with Reduced AlGaN Cladding Thickness Fabricated on GaN Plasmonic Substrate.” Applied Physics Letters, vol. 102, no. 15, Apr. 2013, pp. 151102-151102–04. EBSCOhost, https://doi.org/10.1063/1.4801949.

APA

Stanczyk, S., Czyszanowski, T., Kafar, A., Czernecki, R., Targowski, G., Leszczynski, M., Suski, T., Kucharski, R., & Perlin, P. (2013). InGaN laser diodes with reduced AlGaN cladding thickness fabricated on GaN plasmonic substrate. Applied Physics Letters, 102(15), 151102-151102–151104. https://doi.org/10.1063/1.4801949

Chicago

Stanczyk, S., T. Czyszanowski, A. Kafar, R. Czernecki, G. Targowski, M. Leszczynski, T. Suski, R. Kucharski, and P. Perlin. 2013. “InGaN Laser Diodes with Reduced AlGaN Cladding Thickness Fabricated on GaN Plasmonic Substrate.” Applied Physics Letters 102 (15): 151102-151102–4. doi:10.1063/1.4801949.