Cite
Investigation of ZnO thin films deposited on ferromagnetic metallic buffer layer by molecular beam epitaxy toward realization of ZnO-based magnetic tunneling junctions.
MLA
Belmoubarik, M., et al. “Investigation of ZnO Thin Films Deposited on Ferromagnetic Metallic Buffer Layer by Molecular Beam Epitaxy toward Realization of ZnO-Based Magnetic Tunneling Junctions.” Journal of Applied Physics, vol. 113, no. 17, May 2013, p. 17C106-17C106-3. EBSCOhost, https://doi.org/10.1063/1.4794875.
APA
Belmoubarik, M., Nozaki, T., Endo, H., & Sahashi, M. (2013). Investigation of ZnO thin films deposited on ferromagnetic metallic buffer layer by molecular beam epitaxy toward realization of ZnO-based magnetic tunneling junctions. Journal of Applied Physics, 113(17), 17C106-17C106-3. https://doi.org/10.1063/1.4794875
Chicago
Belmoubarik, M., T. Nozaki, H. Endo, and M. Sahashi. 2013. “Investigation of ZnO Thin Films Deposited on Ferromagnetic Metallic Buffer Layer by Molecular Beam Epitaxy toward Realization of ZnO-Based Magnetic Tunneling Junctions.” Journal of Applied Physics 113 (17): 17C106-17C106-3. doi:10.1063/1.4794875.