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INTRINSIC ROOM TEMPERATURE FERROMAGNETISM OF SILICON-DOPED THIN FILMS.
- Source :
-
Modern Physics Letters B . 5/30/2013, Vol. 27 Issue 13, p-1. 10p. 1 Chart, 7 Graphs. - Publication Year :
- 2013
-
Abstract
- We report our study on the magnetic properties of -doped thin films fabricated by pulsed laser deposition technique. The -doped thin films show ferromagnetism at room temperature. The saturation magnetism increases from 0 to 2.4 emu/cc with the increasing of concentration up to 2%, and then decreases with further increasing of concentration. First-principles calculation demonstrates that the origination of ferromagnetism for -doped system is the two unpaired electrons of -2p. These unpaired electrons increase the magnetic moments which are responsible for the increasing ferromagnetism. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 02179849
- Volume :
- 27
- Issue :
- 13
- Database :
- Academic Search Index
- Journal :
- Modern Physics Letters B
- Publication Type :
- Academic Journal
- Accession number :
- 87517557
- Full Text :
- https://doi.org/10.1142/S0217984913500929