INTRINSIC ROOM TEMPERATURE FERROMAGNETISM OF SILICON-DOPED THIN FILMS.

We report our study on the magnetic properties of -doped thin films fabricated by pulsed laser deposition technique. The -doped thin films show ferromagnetism at room temperature. The saturation magnetism increases from 0 to 2.4 emu/cc with the increasing of concentration up to 2%, and then decreases with further increasing of concentration. First-principles calculation demonstrates that the origination of ferromagnetism for -doped system is the two unpaired electrons of -2p. These unpaired electrons increase the magnetic moments which are responsible for the increasing ferromagnetism. [ABSTRACT FROM AUTHOR]