Cite
Gate All Around MOSFET With Vacuum Gate Dielectric for Improved Hot Carrier Reliability and RF Performance.
MLA
Gautam, Rajni, et al. “Gate All Around MOSFET With Vacuum Gate Dielectric for Improved Hot Carrier Reliability and RF Performance.” IEEE Transactions on Electron Devices, vol. 60, no. 6, June 2013, pp. 1820–27. EBSCOhost, https://doi.org/10.1109/TED.2013.2256912.
APA
Gautam, R., Saxena, M., Gupta, R. S., & Gupta, M. (2013). Gate All Around MOSFET With Vacuum Gate Dielectric for Improved Hot Carrier Reliability and RF Performance. IEEE Transactions on Electron Devices, 60(6), 1820–1827. https://doi.org/10.1109/TED.2013.2256912
Chicago
Gautam, Rajni, Manoj Saxena, Radhey Shyam Gupta, and Mridula Gupta. 2013. “Gate All Around MOSFET With Vacuum Gate Dielectric for Improved Hot Carrier Reliability and RF Performance.” IEEE Transactions on Electron Devices 60 (6): 1820–27. doi:10.1109/TED.2013.2256912.