Determination of Al compositional profiles across AlAs/GaAs heterostructural interface at sub-nanometer spatial resolution by thickness fringe imaging

The Al compositional profile across the AlAs/GaAs heterostructural interface before and after rapid thermal annealing was investigated by a thickness fringe-imaging technique. The diffusion of Al has been quantified by comparison between experimental thickness intensity profiles and the simulated intensity profiles. [Copyright &y& Elsevier]