Formation of Au[sub 0.6]Ge[sub 0.4] alloy induced by Au-ion irradiation of Au/Ge bilayer.

We report on the formation of a-axis oriented Au[sub 0.6]Ge[sub 0.4] alloy on a Si(100) substrate on 120 MeV Au-ion irradiation of a Au/Ge bilayer and subsequent vacuum annealing at 360 °C. Irradiation-induced changes occurring across the Au/Ge interface were studied using Rutherford backscattering spectrometry. Phase identification was done by x-ray diffraction and the surface morphology of the samples was studied by scanning electron microscopy. Formation of oriented Au[sub 0.6]Ge[sub 0.4] alloy was confirmed by transmission electron microscopy and discussed on the basis of swift heavy ion induced effects followed by thermal annealing. [ABSTRACT FROM AUTHOR]