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Size dependence effective band gap in GaSb nano-solid.

Authors :
Diwan, Bhoopendra Dhar
Dubey, Vinod Kumar
Source :
AIP Conference Proceedings. Jun2013, Vol. 1536 Issue 1, p279-280. 2p. 1 Chart, 1 Graph.
Publication Year :
2013

Abstract

In this paper we have studied the size dependence effective band gap of GaSb nano-solids. The band gap is one of the most significant electronic parameter of semiconductor materials. The band gap of semiconductor depends on the temperature, pressure, composition, number of atoms as well as size of the solid. When semiconductor solids are prepared in the form of nano-metric level, their small particle size gives rise to quantum confinement and the energy bands are split into discrete levels. It is found that the effective band gap decreases with increasing of the size (diameter) of GaSb nano-solid. Another conclusion is that the energy band gap of semiconductor tends to decrease with increasing temperature and hence atomic vibration increases. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
0094243X
Volume :
1536
Issue :
1
Database :
Academic Search Index
Journal :
AIP Conference Proceedings
Publication Type :
Conference
Accession number :
87926055
Full Text :
https://doi.org/10.1063/1.4810209