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The combination of two p-doped layers for improving the hole current of organic light-emitting diodes.
- Source :
-
Physica Status Solidi. A: Applications & Materials Science . Jun2013, Vol. 210 Issue 6, p1157-1162. 6p. - Publication Year :
- 2013
-
Abstract
- The combination of MoO3-doped 4,4- N, N- bis [ N-1-naphthyl- N-phenyl-amino]biphenyl (NPB:MoO3) and 4,4′- N, N′-dicarbazole-biphenyl (CBP:MoO3) was used to enhance the hole conduction in organic light-emitting diodes (OLEDs). It is found that the OLED using NPB:MoO3 10 nm/CBP:MoO3 5 nm showed a much increased current density than the one using NPB:MoO3 5 nm/CBP:MoO3 5 nm at a given voltage larger than 4 V, mainly because the hole transport barrier across the p-doped heterojunction in the former device became smaller than that in the latter device with the driving voltage increasing, despite the fact that the 10-nm NPB:MoO3 in the former device caused more Ohmic loss than the 5-nm one in the latter device. As a result of the higher conductivity of NPB:MoO3 than that of CBP:MoO3, the OLED using the combination of 15-nm NPB:MoO3 and 5-nm CBP:MoO3 showed significantly increased performance than the one using the single 20-nm CBP:MoO3. We provide a useful way of advancing the OLEDs toward the practical applications in general lighting and flat-panel displays. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 18626300
- Volume :
- 210
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Physica Status Solidi. A: Applications & Materials Science
- Publication Type :
- Academic Journal
- Accession number :
- 88263528
- Full Text :
- https://doi.org/10.1002/pssa.201228514